ABOUT

Advanced semiconductor technology is central to meeting several of our most urgent environmental and societal challenges. As demand for improved materials and novel device concepts grows, advanced characterization becomes ever more critical, and X-ray and neutron-based techniques offer unique and powerful tools for understanding the physical and chemical properties that underpin semiconductor performance.

With this Theme, we aim to strengthen collaboration between experts in synchrotron- and neutron-based characterization and semiconductor device development, spanning academia and industry across Sweden and Europe. Our goals are to advance semiconductor functionality through fundamental materials research, to pioneer new synchrotron-based approaches to semiconductor characterization, and to train the next generation of researchers in combining device development with advanced X-ray and neutron techniques.

Across all of these aims, we are committed to building lasting structures and partnerships whose impact extends well beyond the duration of this Theme.

HAPPENING IN THEME

WorkING Group 1

advanced transistor technology

Advanced transistor technologies integrate materials covering almost the full periodic table, and interface properties largely determine device performance. Building on Lund's long tradition of investigating III-V MOS gate-stacks, this group will expand to alternative channel materials such as conducting oxides, 2D materials, and wide bandgap materials. In collaboration with international and industrial partners, the main focus will be on the chemical properties at interfaces, their stability, and reactions upon switching, essential knowledge for the development of future device technologies.

WORKING GROUP 2

power electronics

Working group 2 focuses on improving the reliability and performance of power electronics based on wide and ultra-wide bandgap semiconductors such as AlGaN, AlN, and Ga2O3, which are key materials for the future smart energy grid and electrification of transportation. Using synchrotron X-ray and neutron techniques, the group will investigate interface properties, defects, stress distribution, doping, and thermal management under realistic operational conditions.

Heritage WORKING GROUP 3

neuromorphic materials for deep learning and ai

Working group 3 focuses on understanding the materials that enable neuromorphic computing, hardware that emulates the behavior of biological neural systems. Using synchrotron X-ray techniques, including operando studies during device operation, the group will investigate the structural and chemical dynamics of memristor materials such as ferroelectric, ferromagnetic, and phase change materials, with the aim of improving device reliability and reducing variation at the nanoscale.

WORKING GROUP 4

optoelectronics and photovoltaics

Working Group 4 focuses on optoelectronic devices and solar cells, areas where Sweden has a long tradition of strong research and where improved performance and lower costs are of vital interest. Leveraging the unique capabilities of synchrotron X-rays, including high spatial resolution and long absorption lengths, the group will study single devices and grains, and perform operando and in situ studies during processing steps such as crystal growth. A particular focus will be on developing practical solutions for such studies, including sample preparation and the simultaneous probing of light excitation and emission alongside the X-ray measurements.

semiconductors news articles

semiconductors upcoming events

semiconductors past events